IPW60R160C6 数据手册

IPW60R160C6

数据手册规格

数据手册名称 IPW60R160C6
文件大小 34.31 千字节
文件类型 pdf
页数 18

下载数据手册 IPW60R160C6

下载数据手册

其他文档

未找到其他文档!

技术规格

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Infineon Technologies IPW60R160C6
  • Power Dissipation (Pd): -
  • Total Gate Charge (Qg@Vgs): -
  • Drain Source Voltage (Vdss): -
  • Input Capacitance (Ciss@Vds): -
  • Continuous Drain Current (Id): -
  • Gate Threshold Voltage (Vgs(th)@Id): -
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): -
  • Package: TO-247-3
  • Manufacturer: Infineon Technologies